GTT2602
GTT2602 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
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Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 34m 6.3A
The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2602 is universally used for all mercial-industrial applications.
Description
- Capable of 2.5V gate drive
- Low on-resistance
Features
Package Dimensions
REF. A A1 A2 c D E E1
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90...
