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GU08P20 Datasheet Preview

GU08P20 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2006/01/19
REVISED DATE :
GU08P20
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-200V
680m
-8A
Description
The GU08P20 (TO-263 package) is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
REF.
4.40 4.80 c2
0.76 1.00 b2
0.00 0.30 B D
0.36 0.5
e
1.50 REF.
L
2.29 2.79
9.80 10.4 L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
8.6 9.0
2.54 REF.
14.6 15.8
0˚ 8˚
1.27 REF.
Ratings
-200
±20
-8
-5
-30
96
0.77
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.3
62
Unit
/W
/W
GU08P20
Page: 1/4




GTM

GU08P20 Datasheet Preview

GU08P20 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2006/01/19
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-200
-
-2.0
-
-
-
-0.03
-
4
-
-
-
-4.0
-
±100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-5A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- -25 uA VDS=-200V, VGS=0
- -100 uA VDS=-160V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
- 680 m VGS=-10V, ID=-4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 20 32
ID=-5A
Qgs - 5 - nC VDS=-160V
Qgd - 13 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 12 -
VDS=-100V
Tr
Td(off)
-
-
14
64
-
-
ID=-5A
ns VGS=-10V
RG=10
Tf - 28 -
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1210 -
- 170 -
- 45 -
VGS=0V
pF VDS=-25V
f=1.0MHz
Gate Resistance
Rg - 3.6 5.4
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
165
1420
Max.
-1.3
-
-
Unit Test Conditions
V IS=-5A, VGS=0V
ns IS=-5A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GU08P20
Page: 2/4


Part Number GU08P20
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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GU08P20 Datasheet PDF






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