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GU20N03 Datasheet Preview

GU20N03 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2005/06/28
REVISED DATE :
GU20N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
52m
20A
Description
The GU20N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
REF.
4.40 4.80 c2
0.76 1.00 b2
0.00 0.30 B D
0.36 0.5
e
1.50 REF.
L
2.29 2.79
9.80 10.4 L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
8.6 9.0
2.54 REF.
14.6 15.8
0˚ 8˚
1.27 REF.
Ratings
30
20
20
13
58
31
0.25
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4.0
62
Unit
/W
/W
GU20N03
Page: 1/5




GTM

GU20N03 Datasheet Preview

GU20N03 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2005/06/28
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.037
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 3 - S VDS=10V, ID=10A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 100 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 52 m VGS=10V, ID=10A
- 85
VGS=4.5V, ID=8A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 6.1 -
ID=10A
Qgs - 1.4 - nC VDS=24V
Qgd - 4 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 4.9 -
- 29 -
- 14.3 -
- 3.6 -
VDS=15V
ID=20A
ns VGS=10V
RG=3.3
RD=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 290 -
- 160 -
- 45 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
20
58
Unit Test Conditions
V IS=20A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GU20N03
Page: 2/5


Part Number GU20N03
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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