900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






GTM

GU60N03 Datasheet Preview

GU60N03 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
GU60N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
16.5m
55A
Description
The GU60N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage application such as DC/DC converters and high efficiency switching circuit.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
REF.
4.40 4.80 c2
0.76 1.00 b2
0.00 0.30 B D
0.36 0.5
e
1.50 REF.
L
2.29 2.79
9.80 10.4 L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
8.6 9.0
2.54 REF.
14.6 15.8
0˚ 8˚
1.27 REF.
Ratings
30
±20
55
35
215
62.5
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
2.0
62
Unit
/W
/W
GU60N03
Page: 1/5




GTM

GU60N03 Datasheet Preview

GU60N03 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
Electrical Characteristics (Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.037
-
30
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=28A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 25 uA VDS=30V, VGS=0
- 250 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
14.5 16.5 m VGS=10V, ID=28A
21.5 25
VGS=4.5V, ID=22A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 22.4 -
ID=28A
Qgs - 2.7 - nC VDS=24V
Qgd - 14 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 7.4 -
- 81 -
- 24 -
- 18 -
VDS=15V
ID=28A
ns VGS=10V
RG=3.3
RD=0.53
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 950 -
- 440 -
- 145 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
55
215
Unit Test Conditions
V IS=55A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GU60N03
Page: 2/5


Part Number GU60N03
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
PDF Download

GU60N03 Datasheet PDF






Similar Datasheet

1 GU60N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy