ISSUED DATE :2006/06/06
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
75
-
1.0
-
-
-
0.08
-
40
-
-
-
3.0
-
±100
V VGS=0, ID=1mA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=40A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=60, VGS=0
- 100 uA VDS=75V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
- 11 m VGS=10V, ID=40A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 83 130
ID=40A
Qgs - 10 - nC VDS=60V
Qgd - 51 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 15 -
- 73 -
- 340 -
- 200 -
VDS=40V
ID=30A
ns VGS=10V
RG=10
RD=1.33
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 4270 6830
VGS=0V
- 690 -
pF VDS=25V
- 320 -
f=1.0MHz
Gate Resistance
Rg - 1.8 2.7
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
90
235
Max.
1.5
-
-
Unit Test Conditions
V IS=40A, VGS=0V, Tj=25
ns IS=40A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
3. Starting Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=30A.
GU75N07
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