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GU85T08 Datasheet Preview

GU85T08 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2005/03/08
REVISED DATE :
GU85T08
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
80V
13m
75A
Description
The GU85T08 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy3
EAS
Avalanche Current
IAR
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
REF.
4.40 4.80 c2
0.76 1.00 b2
0.00 0.30 B D
0.36 0.5
e
1.50 REF.
L
2.29 2.79
9.80 10.4 L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
8.6 9.0
2.54 REF.
14.6 15.8
0˚ 8˚
1.27 REF.
Ratings
80
20
75
48
260
138
1.11
450
30
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Value
0.9
62
Unit
/W
/W
GU85T08
Page: 1/4




GTM

GU85T08 Datasheet Preview

GU85T08 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2005/03/08
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
80
-
1.0
-
-
-
0.09
-
70
-
- V VGS=0, ID=1mA
- V/ Reference to 25 , ID=1mA
3.0 V VDS=VGS, ID=250uA
- S VDS=10V, ID=45A
100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=80V, VGS=0
- 100 uA VDS=64V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 13 m VGS=10V, ID=45A
- 18
VGS=4.5V, ID=25A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 63 100
ID=45A
Qgs - 23 - nC VDS=64V
Qgd - 38 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 30 -
- 100 -
- 144 -
- 173 -
VDS=40V
ID=45A
ns VGS=10V
RG=10
RD=0.89
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 6300 10080
VGS=0V
- 670 -
pF VDS=25V
- 350 -
f=1.0MHz
Gate Resistance
Rg - 1.1 1.7
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
47
86
Max.
1.3
-
-
Unit Test Conditions
V IS=45A, VGS=0V
ns IS=20A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
3. Staring Tj=25 , VDD=30V, L=1mH, RG=25 , IAS=30A.
GU85T08
Page: 2/4


Part Number GU85T08
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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GU85T08 Datasheet PDF






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