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Pb Free Plating Product
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/01B
GU90T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
5m
75A
Description
The GU90T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@4.5V
ID @TC=25
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
REF.
4.40 4.80 c2
0.76 1.00 b2
0.00 0.30 B D
0.36 0.5
e
1.50 REF.
L
2.29 2.79
9.80 10.4 L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
8.6 9.0
2.54 REF.
14.6 15.8
0˚ 8˚
1.27 REF.
Ratings
30
20
75
63
350
96
0.7
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.3
62
Unit
/W
/W
GU90T03
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