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GLA2N70 Datasheet Preview

GLA2N70 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
wIwSSwU.EDDaDtaASThEee:2t040U5./c0o9/m14
REVISED DATE :
GLA2N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
675V
10
0.2A
Description
The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
SOT-223
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@5V
Continuous Drain Current, VGS@5V
Pulsed Drain Current1
ID @TC=25
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
675
30
0.2
0.13
0.5
1.13
0.01
0.5
1
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
110
Unit
/W
GLA2N70
Page: 1/5




GTM CORPORATION

GLA2N70 Datasheet Preview

GLA2N70 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

wIwSSwU.EDDaDtaASThEee:2t040U5./c0o9/m14
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
675
-
2.0
-
-
-
0.52
-
0.4
-
- V VGS=0, ID=1mA
- V/ Reference to 25 , ID=1mA
4.0 V VDS=VGS, ID=250uA
- S VDS=10V, ID=0.2A
100 nA VGS= 30V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=675V, VGS=0
- 100 uA VDS=540V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 8.0
- 10.0
5.5 -
1.9 -
0.5 -
7.7 -
3.6 -
24 -
44 -
286 -
25 -
6-
VGS=10V, ID=0.2A
VGS=5V, ID=0.2A
ID=0.2A
nC VDS=540V
VGS=10V
VDD=300V
ID=0.2A
ns VGS=10V
RG=3.3
RD=1500
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
0.2
0.5
Unit Test Conditions
V IS=0.2A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=1A.
3. Pulse width 300us, duty cycle 2%.
GLA2N70
Page: 2/5


Part Number GLA2N70
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM CORPORATION
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