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Galaxy Semi-Conductor

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ES3DB Datasheet

(ES3AB - ES3GB) SURFACE MOUNT RECTIFIER

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BL GALAXY ELECTRICAL
SURFACE MOUNT RECTIFIER
ES3AB--- ES3GB
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 3.0 A
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
DO-214AA(SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ES3AB ES3BB ES3CB ES3DB ES3GB
UNITS
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
EA
50
35
50
EB EC ED EG
100 150 200 400
70 105 140 210
100 150 200 400
V
V
V
Maximum average forward rectified current
@TA=100
IF(AV)
3.0
A
Peak forward surge current
8.3ms single half-sine-wave
IFSM
100
A
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage at3.0 A
VF
0.90 1.25 V
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
Typical reverse recovery time (Note1)
Typical junction capacitance (Note2)
IR
trr
CJ
10
A
500
25 35 ns
45 pF
Typical thermal resistance
Operating junction temperature range
R θJA
TJ
40
- 55 ---- + 150
/W
Storage temperature range
TST G
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
- 55 ---- + 150
www.galaxycn.com
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
Document Number 0280030
BLGALAXY ELECTRICAL
1.
Free Datasheet http://www.datasheet4u.com/




Galaxy Semi-Conductor

ES3DB Datasheet Preview

ES3DB Datasheet

(ES3AB - ES3GB) SURFACE MOUNT RECTIFIER

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES
ES3AB --- ES3GB
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 10
N 1. N 1.
+0.5A
trr
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 20/30 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
10
3.0
1.0
TJ=25
0.1
Pulse width=300 s
1%Duty Cycle
0.010 0.4 0.8 1.0
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
2
1
0.1 0.2 0.4 1 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.3 -- FORWARD DERATING CURVE z
3
1.5
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
100
80
60
40
20
0
1
8.3ms Single Half
Sine-Wave
5 10
50 100
NUMBER OF CYCLES AT 60Hz
Document Number 0280030
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
Free Datasheet http://www.datasheet4u.com/


Part Number ES3DB
Description (ES3AB - ES3GB) SURFACE MOUNT RECTIFIER
Maker Galaxy Semi-Conductor
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