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Galaxy Semi-Conductor
Galaxy Semi-Conductor

MUR4100 Datasheet Preview

MUR4100 Datasheet

HIGH EFFICIENCY RECTIFIER

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MUR4100 pdf
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
MUR470 --- MUR4100
VOLTAGE RANGE: 700---1000 V
CURRENT: 4.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High crrent capability
Easily cleaned with freon, alcohol, lsopropand
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27, molded plastic
Terminals: Axial leads,solderable per MIL-STD- 202 ,
Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces, 1.15 grams
Mounting: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MUR470 MUR480 MUR490 MUR4100 UNITS
Maximum recurrent peak reverse voltage
VRRM 700 800 900
Maximum RMS voltage
VRMS 490 560 630
Maximum DC blocking voltage
VDC 700 800 900
Maximum average forw ard rectified current
9.5mm lead length, @TA=75
IF(AV)
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 4.0A
IFSM
VF
Maximum reverse current @TA=25
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
IR
trr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
CJ
RθJA
TJ
Storage temperature range
TSTG
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
4.0
125.0
1.8
10.0
100.0
75
50
30
- 55 ----- + 150
- 55 ----- + 150
Document Number 0262022
BLGALAXY ELECTRICAL
1000
700
1000
V
V
V
A
A
V
A
ns
pF
/W
www.galaxycn.com
1.



Galaxy Semi-Conductor
Galaxy Semi-Conductor

MUR4100 Datasheet Preview

MUR4100 Datasheet

HIGH EFFICIENCY RECTIFIER

No Preview Available !

MUR4100 pdf
RATINGS AND CHARACTERISTIC CURVES
MUR470 --- MUR4100
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 10
N 1. N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISE TIME = 7ns MAX.INPUTIMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
+0.5A
0
-0.25A
trr
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
10
TJ=25
Pulse Width=300µS
1.0
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
5
4
3
2
Single Phase
Half Wave 60HZ
Resistive or
1 Inductive Load
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT Z
125
100
75
50
25
0
1
TJ=125
8.3ms Single Half
Sine-Wave
51
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
120
100
50
TJ=25
20
10
0.1 0.2 0.4 1 2
4
10 20 40 100
REVERSE VOLTAGE,VOLTS
Document Number 0262022
BLGALAXY ELECTRICAL
www.galaxycn.com
2.


Part Number MUR4100
Description HIGH EFFICIENCY RECTIFIER
Maker Galaxy Semi-Conductor
Total Page 2 Pages
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MUR4100 Datasheet PDF
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