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1N5826 - Silicon Power Schottky Diode

Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous for.

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Datasheet Details

Part number 1N5826
Manufacturer GeneSiC
File Size 875.11 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N5826 Datasheet
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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
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