1N5834R Datasheet Silicon Power Schottky Diode

Manufacturer: GeneSiC

Download the 1N5834R datasheet PDF. This datasheet also includes the 1N5832 variant, as both parts are published together in a single manufacturer document.

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1N5834R silicon power schottky diode by GeneSiC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (1N5832-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	1N5834R
Manufacturer	GeneSiC
File Size	326.17 KB
Description	Silicon Power Schottky Diode
Datasheet	1N5834R Datasheet

Overview

Silicon Power Schottky Diode.

Key Features

High Surge Capability.
Types from 20 V to 40V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5832 thru 1N5834R VRRM = 20 V - 40 V IF(AV) = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating t.

📁 Similar Datasheet

Part Number	Description	Manufacturer
1N5834R	(1N5832 - 1N5834R) Schottky Power Diode	Naina Semiconductor
1N5834R	Silicon Power Schottky Diode	America Semiconductor
1N5834R	SCHOTTKY DIODES	TRANSYS
1N5834	(1N5832 - 1N5834R) Schottky Power Diode	Naina Semiconductor
1N5834	Silicon Power Schottky Diode	America Semiconductor

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