A-GA10JT12 Description
Device under development A-GA10JT12 Normally OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220.
A-GA10JT12 Key Features
- 225 oC maximum operating temperature -Best in class temperature independent switching
- Lowest VDS(ON) as pared to any other SiC switch -Suitable for connecting an anti-parallel diode -Gate oxide free SiC s
- Low switching losses -Higher efficiency
A-GA10JT12 Applications
- Ideal for Aerospace and Defense Applications -Down Hole Oil Drilling, Geothermal Instrumentation -Hybrid Electric Vehicles (HEV) -Solar Inverters