Datasheet4U Logo Datasheet4U.com

GA03IDDJT30-FR4 - Isolated Gate Driver

General Description

Min.

Max.

Key Features

  • Requires single 12 V voltage supply.
  • Pin Out compatible with MOSFET driver boards.
  • Multiple Internal level topology for low drive losses.
  • High-side drive capable with 3000 V isolation.
  • 5000 V Signal Isolation (up to 10 s).
  • Capable of high gate currents with 3 W maximum power.
  • RoHS Compliant Product Image GA03IDDJT30-FR4.

📥 Download Datasheet

Datasheet Details

Part number GA03IDDJT30-FR4
Manufacturer GeneSiC
File Size 780.27 KB
Description Isolated Gate Driver
Datasheet download datasheet GA03IDDJT30-FR4 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features  Requires single 12 V voltage supply  Pin Out compatible with MOSFET driver boards  Multiple Internal level topology for low drive losses  High-side drive capable with 3000 V isolation  5000 V Signal Isolation (up to 10 s)  Capable of high gate currents with 3 W maximum power  RoHS Compliant Product Image GA03IDDJT30-FR4 VISOLATION PDRIVE fmax = 3000 V = 5W = 350 kHz Section I: Introduction The GA03IDDJT30-FR4 provides an optimized gate drive solution for SiC Junction Transistors (SJT).