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GA10JT12-263 - Normally - OFF Silicon Carbide Junction Transistor

GeneSiC

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Datasheet Details

Part number	GA10JT12-263
Manufacturer	GeneSiC
File Size	903.84 KB
Description	Normally - OFF Silicon Carbide Junction Transistor
Datasheet	GA10JT12-263-GeneSiC.pdf

GA10JT12-263 Product details

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Short-Circuit Withstand Capability.
Lowest-in-class Conduction Losses.
High Circuit E.

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Published: Nov 9, 2015 |