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GA10JT12-263 - Normally - OFF Silicon Carbide Junction Transistor

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Datasheet Details

Part number GA10JT12-263
Manufacturer GeneSiC
File Size 903.84 KB
Description Normally - OFF Silicon Carbide Junction Transistor
Datasheet download datasheet GA10JT12-263 Datasheet

Overview

Normally – OFF Silicon Carbide Junction Transistor.

Key Features

  • 175 °C Maximum Operating Temperature.
  • Gate Oxide Free SiC Switch.
  • Exceptional Safe Operating Area.
  • Excellent Gain Linearity.
  • Temperature Independent Switching Performance.
  • Low Output Capacitance.
  • Positive Temperature Coefficient of RDS,ON.
  • Suitable for Connecting an Anti-parallel Diode Advantages.
  • Compatible with Si MOSFET/IGBT Gate Drive ICs.
  • > 20 µs Short-Circuit Withstand Capability.
  • Lowest-in-class Conduction Losses.
  • High Circuit E.

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