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GeneSiC

GA20JT06-CAL Datasheet Preview

GA20JT06-CAL Datasheet

OFF Silicon Carbide Junction Transistor

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Die Datasheet
GA20JT06-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
210°C maximum operating temperature
Gate Oxide Free SiC switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Co-efficient of RDS,ON
Suitable for connecting an anti-parallel diode
VDS
RDS(ON)
ID @ 25 oC
hFE
=
=
=
=
600 V
65 m
45 A
110
Die Size = 2.85 mm x 2.85 mm
Advantages
Compatible with Si MOSFET/IGBT gate-drivers
> 20 µs Short-Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Absolute Maximum Ratings (TC = 25 oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
VDS
ID
ID
IGM
RBSOA
SCSOA
VGS = 0 V
TC = 25 °C
TC > 125°C, assumes RthJC < 0.53 oC/W
TVJ = 210 oC,
Clamped Inductive Load
TVJ = 210 oC, IG = 1 A, VDS = 400 V,
Non Repetitive
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
VGS
VDS
Operating Junction and Storage Temperature
Tj, Tstg
Maximum Processing Temperature
TProc
10 min. maximum
Values
600
45
20
1.3
ID,max = 20
@ VDS ≤ VDSmax
20
30
40
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Electrical Characteristics
Parameter
Symbol
Conditions
Values
min. typ. max.
Unit
On Characteristics
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
Off Characteristics
Drain Leakage Current
Gate – Source Leakage Current
RDS(ON)
VGS,SAT
hFE
ID = 20 A, IG = 400 mA, Tj = 25 °C
ID = 20 A, IG = 500 mA, Tj = 125 °C
ID = 20 A, IG = 1000 mA, Tj = 175 °C
ID = 20 A, IG = 1000 mA, Tj = 210 °C
D = 20 A, ID/IG = 40, Tj = 25 °C
ID = 20 A, ID/IG = 30, Tj = 175 °C
VDS = 5 V, ID = 20 A, Tj = 25 °C
VDS = 5 V, ID = 20 A, Tj = 125 °C
VDS = 5 V, ID = 20 A, Tj = 175 °C
VDS = 5 V, ID = 20 A, Tj = 210 °C
IDSS
VR = 600 V, VGS = 0 V, Tj = 25 °C
VR = 600 V, VGS = 0 V, Tj = 210 °C
IGSS
VGS = -20 V, Tj = 25 °C
65
90
110
140
3.44
3.24
110
78
73
71
10
100
20
V
µA
nA
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 9




GeneSiC

GA20JT06-CAL Datasheet Preview

GA20JT06-CAL Datasheet

OFF Silicon Carbide Junction Transistor

No Preview Available !

Electrical Characteristics
Parameter
Capacitance Characteristics
Input Capacitance
Reverse Transfer/Output Capacitance
Figures
Die Datasheet
GA20JT06-CAL
Symbol
Conditions
Values
min. typ. max.
Unit
Ciss
Crss/Coss
VGS = 0 V, VD = 100 V, f = 1 MHz
VD = 100 V, f = 1 MHz
2100
160
pF
pF
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 125 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: Typical Output Characteristics at 210 °C
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg2 of 9


Part Number GA20JT06-CAL
Description OFF Silicon Carbide Junction Transistor
Maker GeneSiC
Total Page 10 Pages
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