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Normally – OFF Silicon Carbide Junction Transistor
Features
• 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs • > 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth
Package
D
GA50JT12-247
VDS
=
RDS(ON)
=
ID (Tc = 25°C)
=
ID (Tc > 125°C)
=
hFE (Tc = 25°C) =
1200 V 20 mΩ 100 A 50 A 85
DS G
TO-247
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation • Hybri
GA50JT12-247 Datasheet
