GB01SHT06-CAU Datasheet - GeneSiC

High Temperature Silicon Carbide Power Schottky Diode

* 650 V Schottky rectifier

* 210 °C maximum operating temperature

* Zero reverse recovery charge

* Superior surge current capability

* Positive temperature coefficient of VF

* Temperature independent switching behavior

* Lowest figure of merit QC/IF

* Available screen

GB01SHT06-CAU

GeneSiC

288.50 KB

High temperature silicon carbide power schottky diode.

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