GB01SHT12-CAL - High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

Datasheet Details

Part number	GB01SHT12-CAL
Manufacturer	GeneSiC
File Size	281.43 KB
Description	High Temperature Silicon Carbide Power Schottky Diode
Datasheet	GB01SHT12-CAL-GeneSiC.pdf

1200 V Schottky rectifier.
210°C maximum operating temperature.
Zero reverse recovery charge.
Superior surge current capability.
Positive temperature coefficient of VF.
Temperature independent switching behavior.
Lowest figure of merit QC/IF.
Available screened to Mil-PRF-19500 Die Datasheet GB01SHT12-CAL VRRM IF @ 25 oC QC = 1200 V = 2.5 A = 6 nC Die Size = 0.9 mm x 0.9 mm Advantages.
High temperature operation.
Improved circuit effi.

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Published: Jun 25, 2016 |