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GB50SLT12-247 Datasheet Silicon Carbide Schottky Diode

Manufacturer: GeneSiC

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Datasheet Details

Part number GB50SLT12-247
Manufacturer GeneSiC
File Size 512.14 KB
Description Silicon Carbide Schottky Diode
Download GB50SLT12-247 Download (PDF)

Overview

GB50SLT12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky.

Key Features

  • High Avalanche (UIS) Capability.
  • Enhanced Surge Current Capability.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • 175 °C Maximum Operating Temperature.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient of VF.
  • Extremely Fast Switching Speeds Package VRRM IF (Tc = 135°C) QC = 1200 V = 103 A = 199 nC 2 1 TO-247-2L Advantages.
  • Low Standby Power Losses.
  • Improved Circuit.

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