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GR1500JT17-263 - Silicon Carbide Junction Transistor

Features

  • 175 °C Maximum Operating Temperature.
  • Gate Oxide Free SiC Switch.
  • Exceptional Safe Operating Area.
  • Excellent Gain Linearity.
  • Temperature Independent Switching Performance.
  • Low Output Capacitance.
  • Positive Temperature Coefficient of RDS,ON.
  • Suitable for Connecting an Anti-parallel Diode Advantages.
  • Compatible with Si MOSFET/IGBT Gate Drive ICs.
  • > 20 µs Short-Circuit Withstand Capability.
  • Lowest-in-.

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Datasheet preview – GR1500JT17-263

Datasheet Details

Part number GR1500JT17-263
Manufacturer GeneSiC
File Size 578.77 KB
Description Silicon Carbide Junction Transistor
Datasheet download datasheet GR1500JT17-263 Datasheet
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    Full PDF Text Transcription

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    Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode Advantages • Compatible with Si MOSFET/IGBT Gate Drive ICs • > 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth Package GR1500JT17-263 VDS RDS(ON) ID (@ 25°C) hFE (@ 25°C) = 1700 V = 1.
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