Download the MBR30020CTR datasheet PDF.
This datasheet also covers the MBR30020CT variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
High Surge Capability.
Types from 20 V to 40 V VRRM.
Not ESD Sensitive
MBR30020CT thru MBR30040CTR
VRRM = 20 V - 40 V IF(AV) = 300 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR30020CT(R) MBR30030CT(R) MBR30035CT(R) MBR30040CT(R) Unit
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj.
Full PDF Text Transcription for MBR30020CTR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBR30020CTR. For precise diagrams, and layout, please refer to the original PDF.
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 3...
View more extracted text
SD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035CT(R) MBR30040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Sy
MBR30020CTR Datasheet
