MBR30060CT - Silicon Power Schottky Diode

This page provides the datasheet information for the MBR30060CT, a member of the MBR30045CT Silicon Power Schottky Diode family.

Product Overview

GeneSiC

Part number	MBR30060CT
Manufacturer	GeneSiC
File Size	711.34 KB
Description	Silicon Power Schottky Diode
Datasheet	MBR30060CT Datasheet
Additional preview pages of the MBR30060CT datasheet.

High Surge Capability.
Types from 45 V to 100 V VRRM.
Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30045CT(R) MBR30060CT(R) MBR30080CT(R) MBR300100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VD.

MBR30060CT - 300 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)
MBR30060CT - Schottky Power Diode (Naina Semiconductor)
MBR30060CT - Silicon Power Schottky Diode (America Semiconductor)
MBR30060CTR - Schottky Power Diode (Naina Semiconductor)
MBR30060CTR - Silicon Power Schottky Diode (America Semiconductor)
MBR300100CT - 300 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)
MBR300100CT - Schottky Power Diode (Naina Semiconductor)
MBR300100CT - Silicon Power Schottky Diode (America Semiconductor)
MBR300100CTR - Schottky Power Diode (Naina Semiconductor)
MBR300100CTR - Silicon Power Schottky Diode (America Semiconductor)

Other Datasheets by GeneSiC

Published: Jun 27, 2019 |