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MBR40035CT Datasheet Silicon Power Schottky Diode

Manufacturer: GeneSiC

Download the MBR40035CT datasheet PDF. This datasheet also includes the MBR40020CT variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR40020CT-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR40035CT
Manufacturer GeneSiC
File Size 412.73 KB
Description Silicon Power Schottky Diode
Download MBR40035CT Download (PDF)

Overview

MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode.

Key Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol VRRM VRMS VDC Tj Tstg Conditions MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) 20 14 20 -55 to 150 -55 to 150 30.