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MBR6030R - Silicon Power Schottky Diode

Download the MBR6030R datasheet PDF. This datasheet also covers the MBR6020 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 20 V to 40V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6020 thru MBR6040R VRRM = 20 V - 40 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6020 (R) MBR6030 (R) MBR6035 (R) MBR6040 (R) Repetitive peak reverse voltage RMS reverse voltage DC block.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR6020-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR6030R
Manufacturer GeneSiC
File Size 723.39 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR6030R Datasheet

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Other Datasheets by GeneSiC

Part Number Description
MBR6030 Silicon Power Schottky Diode
MBR6035 Silicon Power Schottky Diode
MBR6035R Silicon Power Schottky Diode
MBR600100CT Silicon Power Schottky Diode
MBR600100CTR Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6020 thru MBR6040R VRRM = 20 V - 40 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6020 (R) MBR6030 (R) MBR6035 (R) MBR6040 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.