MBRT20080R - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
This page provides the datasheet information for the MBRT20080R, a member of the MBRT20045 (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode family.
Additional preview pages of the MBRT20080R datasheet.
MBRT20080R Product details
Features
High Surge Capability.
Types up to 100 V VRRM.
Isolation Type Package Three Tower Package
VRRM = 20 V - 100 V IF = 200 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125.
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MBRT20080R Datasheet
