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General Semiconductor

ES3D Datasheet Preview

ES3D Datasheet

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

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ES3A THRU ES3D
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 3.0 Amperes
0.126 (3.20)
0.114 (2.90)
DO-214AB
0.280 (7.11)
0.260 (6.60)
0.245 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
250°C/10 seconds at terminals
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008 (0.203)
MAX.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at TL=100°C
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
TJ=25°C
TJ=100°C
Maximum stored charge
(NOTE 2)
TJ=25°C
TJ=100°C
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) trr and Qrr measured at: VR=30V, di/dt=50A/µs, IF=3.0A, and Irr=10% IR
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
trr
Qrr
CJ
RΘJA
RΘJL
TJ, TSTG
ES3A
EA
50
35
50
ES3B
ES3C
EB EC
100 150
70 105
100 150
3.0
100.0
0.90
10.0
500.0
20.0
30.0
50.0
15.0
35.0
45.0
47.0
12.0
-55 to +150
ES3D
ED
200
140
200
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µA
ns
ns
nC
pF
°C/W
°C
4/98




General Semiconductor

ES3D Datasheet Preview

ES3D Datasheet

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

No Preview Available !

RATING AND CHARACTERISTIC CURVES ES3A THRU ES3D
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
3.0 RESISTIVE OR INDUCTIVE LOAD
2.0
1.0
P.C.B. MOUNTED on
0.31 x 0.31” (8.0 x 8.0mm) COPPER PADS
0
80 90 100 110 120 130 140 150
LEAD TEMPERATURE, °C
150
125
100
75
50
25
0
1
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at TL=100°C
10
NUMBER OF CYCLES AT 60 HZ
100
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
TJ=25°C
10
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1.8
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
105
90
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
75
60
45
30
15
0
0.1
1
REVERSE VOLTAGE, VOLTS
100
1,000
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
10
1
0.1
TJ=100°C
TJ=75°C
TJ=25°C
0.01
0
20 40 60 80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100


Part Number ES3D
Description SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Maker General Semiconductor
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