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General Semiconductor

ES3F Datasheet Preview

ES3F Datasheet

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

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NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
ES3F AND ES3G
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 300 to 400 Volts Forward Current - 3.0 Amperes
0.126 (3.20)
0.114 (2.90)
DO-214AB
0.280 (7.11)
0.260 (6.60)
0.245 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
250°C/10 seconds at terminals
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008 (0.203)
MAX.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at TL=100°C
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at working peak reverse voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time (NOTE 2)
Maximum reverse recovery current (NOTE 2)
Maximum stored charge (NOTE 2)
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRWM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
trr
IRM
Qrr
CJ
RΘJA
RΘJL
TJ, TSTG
ES3F
EF
300
225
210
300
ES3G
EG
400
300
280
400
3.0
100
1.10
10.0
350
35
50
3.0
50
30
50
15
-55 to +150
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Volts
µA
ns
ns
Amps
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at IF=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1IRM
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas
NOTICE: Advanced product information is subject to change without notice
4/98




General Semiconductor

ES3F Datasheet Preview

ES3F Datasheet

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

No Preview Available !

RATING AND CHARACTERISTIC CURVES ES3F AND ES3G
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
3.0
RESISTIVE OR INDUCTIVE LOAD
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
125
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at TL=100°C
2.0 100
75
1.0 50
0
80 90 100 110 120 130 140 150
LEAD TEMPERATURE, °C
25
0
1 10 100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
10 TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1.6
1,000
100
10
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
TJ=125°C
TJ=100°C
1
TJ=25°C
0.1
0.01
0
20 40 60 80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
200
160
120
80
40
0
25
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
@5A,50A/µs
@2A,20A/µs
@5A,50A/µs
@2A,20A/µs
@1A,100A/µs
@1A,100A/µs
50 75 100 125 150
JUNCTION TEMPERATURE, °C
trr
Qrr
175
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
100
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
1
0.1 1 10 100
REVERSE VOLTAGE, VOLTS


Part Number ES3F
Description SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Maker General Semiconductor
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ES3F Datasheet PDF





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