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General Semiconductor

FESB16GT Datasheet Preview

FESB16GT Datasheet

FAST EFFICIENT PLASTIC RECTIFIER

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NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
FESB16AT THRU FESB16JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 16.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
TO-263AB
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low power loss
Low forward voltage, high current capability
High surge current capability
Superfast recovery time, for high efficiency
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body over
passivated chips
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
Maximum instantaneous forward voltage at 16A
Maximum DC reverse current
at rated DC blocking voltage
TC=25°C
TC=100°C
Maximum reverse recovery time (NOTE1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr =0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case
FESB
SYMBOLS 16AT
VRRM 50
VRMS 35
VDC 50
FESB FESB
16BT 16CT
100 150
70 105
100 150
FESB
16DT
200
140
200
FESB
16FT
300
210
300
FESB FESB
16GT 16HT
400 500
280 350
400 500
FESB
16JT UNITS
600 Volts
420 Volts
600 Volts
I(AV) 16.0 Amps
IFSM
VF
IR
trr
CJ
RΘJC
TJ, TSTG
250.0
Amps
0.975
35.0
10.0
500.0
1.3
175.0
1.2
-65 to +150
1.5
50.0
145.0
Volts
µA
ns
pF
°C/W
°C
4/98




General Semiconductor

FESB16GT Datasheet Preview

FESB16GT Datasheet

FAST EFFICIENT PLASTIC RECTIFIER

No Preview Available !

RATINGS AND CHARACTERISTICS CURVES FESB16AT THRU FESB16JT
FIG. 1 - FORWARD CURRENT DERATING CURVE
20
RESISTIVE OR INDUCTIVE LOAD
16
12
8.0
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
TC=100°C
200
150
100
4.0 50
0
0 50 100 150
CASE TEMPERATURE, °C
0
1 10 100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
80
TJ =125°C
10
50-200V
300-400V
500-600V
1
0.1
0.2
TJ = 25°C
PULSE WIDTH = 300µs
1% DUTY CYCLE
0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1,000
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHZ
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
1,000
100
TJ=25°C
10
TJ =100°C
1 50-200V
300-600V
0.1
0
TJ=25°C
20 40 60 80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
100
10
0.1
50-400V
500-600V
1 10
REVERSE VOLTAGE, VOLTS
100


Part Number FESB16GT
Description FAST EFFICIENT PLASTIC RECTIFIER
Maker General Semiconductor
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FESB16GT Datasheet PDF






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