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GF6968A - Common-Drain Dual N-Channel MOSFET

Key Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Li-ion battery packs use.
  • Designed for battery-switch.

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www.DataSheet4U.com GF6968A Common-Drain Dual N-Channel MOSFET H C EN ET R T ENF G TSSOP-8 0.122 (3.10) 0.114 (2.90) 8 5 0.177 (4.50) 0.170 (4.30) Low VGS(th) VDS 20V RDS(ON) 22mΩ ID 6.2A D 8 S2 7 S2 6 G2 5 ® t c u rod P New 0.028 (0.70) 0.020 (0.50) 0.005 (0.127) 1 D 2 S1 3 S1 4 G1 0.260 (6.60) 0.244 (6.20) 1 4 0.260 (6.60) min. 0.028 (0.70) 0.020 (0.50) 0.204 (5.20) 0.025 (0.65) 0.012 (0.30) 0.010 (0.25) 0.047 (1.20) 0.041 (1.05) 0 °– 8 ° 0.012 (0.30) 0.010 (0.25) 0.025 (0.65) 0.006 (0.15) 0.002 (0.05) Dimensions in inches and (millimeters) Mounting Pad Layout Mechanical Data Case: TSSOP-8 Package Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.