GFB75N03 - N-Channel Enhancement-Mode MOSFET

General Semiconductor (now Vishay)

Datasheet Details

Part number	GFB75N03
Manufacturer	General Semiconductor (now Vishay)
File Size	134.72 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	GFB75N03 Datasheet

Overview

www.DataSheet4U.com GFB75N03 N-Channel Enhancement-Mode MOSFET H C N t E ET c u R d T ENF ro P G New ® VDS 30V RDS(ON) 6.5mΩ ID 80A D TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.

D G 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) 0.360 (9.14) G PIN D S 0.575 (14.60) 0.625 (15.88) 0.055 (1.39) 0.066 (1.68) Dimensions in inches and (millimeters) 0.63 (17.02) 0.33 (8.38) Seating Plate -T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940) 0.120 (3.05) 0.155 (3.94) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mounting Pad Layout Mechanical Data Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.

Key Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30.

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GFB60N03	N-Channel MOSFET