GFB75N03 - N-Channel Enhancement-Mode MOSFET

General Semiconductor

Datasheet Details

Part number	GFB75N03
Manufacturer	General Semiconductor
File Size	134.72 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	GFB75N03_GeneralSemiconductor.pdf

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30.

📁 GFB75N03 Similar Datasheet

Other Datasheets by General Semiconductor

Published: Oct 10, 2007 |