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General Semiconductor

LL4151 Datasheet Preview

LL4151 Datasheet

Small Signal Diodes

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LL4151
Small Signal Diodes
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode in MiniMELF
case especially suited for automatic
insertion.
This diode is also available in other case styles
including the DO-35 case with the type
designation 1N4151 and the SOD-123 case
with the type designation 1N4151W.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Forward DC current at Tamb = 25 °C
IF
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f 50 Hz
I0
Surge Forward Current at t < 1 s and Tj = 25 °C
IFSM
Power Dissipation at Tamb = 25 °C
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
1) Valid provided that electrodes are kept at ambient temperature.
Value
50
75
2001)
1501)
500
5001)
175
–65 to +175
Unit
V
V
mA
mA
mA
mW
°C
°C
4/98




General Semiconductor

LL4151 Datasheet Preview

LL4151 Datasheet

Small Signal Diodes

No Preview Available !

LL4151
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Forward Voltage
at IF = mA
VF
Leakage Current
at VR = 50 V
at VR = 50 V, Tj = 150 °C
IR
IR
Capacitance
at VF = VR = 0
Reverse Recovery Time
from IF = 10 mA through IR = 10 mA to IR = 1 mA
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100
Ctot
trr
trr
Thermal Resistance
Junction to Ambient Air
RthJA
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηv 0.45
1) Valid provided that electrodes are kept at ambient temperature.
Typ.
Max.
1
Unit
V
50 nA
50 µA
2 pF
4
2
0.351)
ns
ns
K/mW
Rectification Efficiency Measurement Circuit


Part Number LL4151
Description Small Signal Diodes
Maker General Semiconductor
Total Page 4 Pages
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