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General Semiconductor

LL4448 Datasheet Preview

LL4448 Datasheet

Small Signal Diodes

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LL4448
Small Signal Diodes
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode in MiniMELF case
especially suited for automatic insertion.
This diode is also available in other case
styles including: the DO-35 case with the type
designation 1N4448, the SOD-123 case with the
type designation 1N4448W, and the SOT-23
case with the type designation IMBD4448.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f 50 Hz
I0
Surge Forward Current at t < 1 s and Tj = 25 °C
IFSM
Power Dissipation at Tamb = 25 °C
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
1) Valid provided that electrodes are kept at ambient temperature.
Value
75
100
1501)
500
5001)
175
–65 to +175
Unit
V
V
mA
mA
mW
°C
°C
4/98




General Semiconductor

LL4448 Datasheet Preview

LL4448 Datasheet

Small Signal Diodes

No Preview Available !

LL4448
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Forward Voltage
at IF = 5 mA
at IF = 100 mA
VF 0.62
VF
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 °C
IR
IR
IR
Capacitance
at VF = VR = 0
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100
Thermal Resistance
Junction to Ambient Air
Ctot
trr
RthJA
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηv 0.45
1) Valid provided that electrodes are kept at ambient temperature.
Typ.
Max.
0.72
1
25
5
50
4
4
0.351)
Unit
V
V
nA
µA
µA
pF
ns
K/mW
Rectification Efficiency Measurement Circuit


Part Number LL4448
Description Small Signal Diodes
Maker General Semiconductor
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LL4448 Datasheet PDF






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