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General Semiconductor
General Semiconductor

RGF1D Datasheet Preview

RGF1D Datasheet

SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

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RGF1D pdf
RGF1A THRU RGF1M
SURFACE MOUNT GLASS PASSIVATED JUNCTION
FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
DO-214BA
MODIFIED J-BEND
0.060 (1.52)
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.0105 (0.27)
0.0065 (0.17)
0.118 (3.00)
0.106 (2.69)
0.108 (2.74)
0.098 (2.49)
0.060 (1.52)
0.030 (0.76)
0.152 TYP.
0.006
0.226 (5.74)
0.114 (2.90)
0.094 (2.39)
0.196 (4.98)
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846
®
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Built-in strain relief
Easy pick and place
Fast switching for high efficiency
High temperature soldering guaranteed:
450°C/5 seconds at terminals
Complete device submersible temperature of
265°C for 10 seconds in solder bath
MECHANICAL DATA
Case: JEDEC DO-214BA molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0048 ounce, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=120°C
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC method)
Maximum instantaneous forward voltage at 1.0A
Maximum full load reverse current,
full cycle average,
TA=55°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS RGF1A
RA
VRRM 50
VRMS 35
VDC
50
RGF1B
RB
100
70
100
RGF1D
RD
200
140
200
RGF1G
RG
400
280
400
RGF1J
RJ
600
420
600
I(AV)
1.0
IFSM
VF
IR(AV)
IR
trr
CJ
RΘJA
RΘJL
TJ, TSTG
30.0
1.30
50.0
5.0
100
150 250
8.5
85.0
28.0
-65 to +175
RGF1K
RK
800
560
800
RGF1M
RM
1000
700
1000
UNITS
Volts
Volts
Volts
Amp
Amps
Volts
µA
µA
500 ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied Vr=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
4/98



General Semiconductor
General Semiconductor

RGF1D Datasheet Preview

RGF1D Datasheet

SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

No Preview Available !

RGF1D pdf
RATINGS AND CHARACTERISTIC CURVES RGF1A THRU RGF1M
FIG. 1 - FORWARD CURRENT DERATING CURVE
60 HZ
RESISTIVE OR
1
INDUCTIVE LOAD
P.C.B. MOUNTED on
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
25 (JEDEC Method)
20
0.5 15
10
0
100 110 120 130 140 150 160
LEAD TEMPERATURE, °C
175
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
TJ=25°C
1
PULSE WIDTH=300µs
1% DUTY CYCLE
5
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ=125°C
1 TJ=100°C
0.1
TJ=25°C
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
0.01
0 20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
100
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
1
1 10 100
REVERSE VOLTAGE, VOLTS
100
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
MOUNTED ON 0.2 x 0.2” (5 x 7mm)
COPPER PAD AREAS
10
1
0.1
0.01
0.1 1 10
t, PULSE DURATION, sec
100


Part Number RGF1D
Description SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Maker General Semiconductor
Total Page 2 Pages
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