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General Semiconductor
General Semiconductor

UGB8BT Datasheet Preview

UGB8BT Datasheet

ULTRAFAST EFFICIENT PLASTIC RECTIFIER

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UGB8BT pdf
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
UGB8AT THRU UGB8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
Ultrafast reverse
recovery time for high efficiency
Soft recovery characteristics
Excellent high temperature switching
Glass passivated chip junction
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC=100°C
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
Maximum instantaneous forward voltage at: 8.0
20A
5.0A, TJ=150°C
Maximum DC reverse current
at rated DC blocking voltage
TC=25°C
TC=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
TJ=25°C
TJ=100°C
Maximum recovered stored charge
(NOTE 2)
TJ=25°C
TJ=100°C
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
trr
Qrr
CJ
RΘJC
TJ, TSTG
UGB8AT
50
35
50
UGB8BT
100
70
100
UGB8CT
150
105
150
8.0
150.0
1.00
1.20
0.95
10.0
300.0
20.0
30.0
50.0
20.0
45.0
45.0
4.0
-55 to+150
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM for meaurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
UGB8DT
200
140
200
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µA
ns
ns
nC
pF
°C/W
°C
10/27/98



General Semiconductor
General Semiconductor

UGB8BT Datasheet Preview

UGB8BT Datasheet

ULTRAFAST EFFICIENT PLASTIC RECTIFIER

No Preview Available !

UGB8BT pdf
RATINGS AND CHARACTERISTIC CURVES UGB8AT THRU UGB8DT
FIG. 1 - FORWARD CURRENT DERATING
CURVE
12
RESISTIVE OR INDUCTIVE LOAD
10
1,000
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
TC=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
8.0
6.0
100
4.0
2.0
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, °C
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
10 TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1.6
1,000
100
10
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
TJ=125°C
TJ=100°C
1
TJ=25°C
0.1
0.01
0
20 40 60 80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
60
IF=4.0A
VR=30V
50
di/dt= 150A/µs
di/dt=100A/µs
di/dt=20A/µs
40 di/dt=50A/µs
di/dt=100A/µs
30 di/dt=50A/µs
di/dt=150A/µs
20
10
0
0
di/dt=20A/µs
trr
Qrr
25 50 75 100 125 150 175
JUNCTION TEMPERATURE, °C
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
100
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
1
0.1
0.01
0.1 1 10
REVERSE VOLTAGE, VOLTS
100


Part Number UGB8BT
Description ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Maker General Semiconductor
Total Page 2 Pages
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