* The MJIRF6N70 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters
MJIRF6N70 Datasheet (538.81 KB)
MJIRF6N70
Global Semiconductor
538.81 KB
Power mosfet.
MJIRF6N70 ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω Major Ratings and Characteristics Characteristics Values Units ID 6.0 A IDM 24 A VDS 700 V VGS .
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