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GSM1024 - N-channel MOSFET

General Description

GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V.
  • 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V.
  • 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • SOT-563 package design.

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Datasheet Details

Part number GSM1024
Manufacturer Globaltech
File Size 944.18 KB
Description N-channel MOSFET
Datasheet download datasheet GSM1024 Datasheet

Full PDF Text Transcription for GSM1024 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSM1024. For precise diagrams, and layout, please refer to the original PDF.

20V N-Channel Enhancement Mode MOSFET Product Description GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low ga...

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, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM1024X7F (SOT-563) Features  20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V  20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V  20V/0.4A,RDS(ON)=560mΩ@VGS=1.

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