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GSMDD6905 - P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V, -16A, RDS(ON)=48mΩ@VGS=-10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • TO-252-2L package design.

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Datasheet preview – GSMDD6905

Datasheet Details

Part number GSMDD6905
Manufacturer Globaltech
File Size 567.81 KB
Description P-Channel MOSFET
Datasheet download datasheet GSMDD6905 Datasheet
Additional preview pages of the GSMDD6905 datasheet.

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Full PDF Text Transcription

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GSMDD6905 60V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -60V, -16A, RDS(ON)=48mΩ@VGS=-10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ TO-252-2L package design Applications „ Motor Drive „ Power Tools „ LED Lighting Packages & Pin Assignments GSMDD6905DF (TO-252-2L) Top View Description Gate Source Drain GSMDD6905 www.gs-power.
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