Description
SSF1090 100V N-Channel MOSFET .
The SSF1090 utilizes the latest processing techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating.
Features
* Advanced trench process technology
* Ideal for convertors and power controls
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
Applications
* and a wide variety of other applications. Application n Power switching application
TO-220
Absolute Maximum Ratings
Symbol
Parameter
ID@Tc=25 °C Continuous Drain Current,VGS@10V
ID@Tc=100°C Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current ①
PD@TC=25°C
Power Dissipation Linear Dera
