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SSF1090
100V N-Channel MOSFET
Features Advanced trench process technology Ideal for convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% tested
ID =15A BV=100V Rdson=0.06Ω (Typ.)
Description
The SSF1090 utilizes the latest processing techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable device for use in power switching applications and a wide variety of other applications.