SSFP3N80 - Power MOSFET

Download the SSFP3N80 datasheet PDF (SSFP3N80-Good included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

StarMOS is a new generation of high voltage N

Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.

Good-Ark

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Datasheet Details

Part number	SSFP3N80
Manufacturer	Good-Ark
File Size	122.22 KB
Description	Power MOSFET
Datasheet	SSFP3N80 Datasheet

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Full PDF Text Transcription

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SSFP3N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 800V ID25 = 3.0A RDS(ON) = 4.

Published: Mar 23, 2015 |