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SSFP5N80 Datasheet Preview

SSFP5N80 Datasheet

StarMOS Power MOSFET

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SSFP5N80
StarMOST Power MOSFET
Extremely high dv/dt capability
Low Gate Charge Qg results in
Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
with planar stripe DMOS technology.
Application
Switching application
VDSS = 800V
ID25 = 4.8A
RDS(ON) = 2.6Ω
Pin1–Gate
Pin2–Drain
Pin1–Source
Absolute Maximum Ratings
ID@Tc=25ْ C
ID@Tc=100ْC
Parameter
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
4.8
3.04
19.2
140
1.12
±30
590
4.8
14
4.0
55 to +150
300(1.6mm from case)
10 Ibfin(1.1Nm)
Units
A
W
W/ْ C
V
mJ
A
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
— — 0.89
RθCS
Case-to-Sink,Flat,Greased Surface
0.5
RθJA Junction-to-Ambient
— — 62.5
Units
ْC/W
1




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SSFP5N80 Datasheet Preview

SSFP5N80 Datasheet

StarMOS Power MOSFET

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SSFP5N80
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 800
V VGS=0V,ID=250μA
V(BR)DSS/TJ Breakdown Voltage Temp.Coefficient 0.9 V/ْC Reference to 25ْC,ID=250μA
RDS(on)
VGS(th)
Static Drain-to-Source On-resistance 2.0
Gate Threshold Voltage
3.0
2.6 Ω VGS=10V,ID=2.4A
5.0 V VDS=VGS,ID=250μA
gfs Forward Transconductance 4.9 S VDS=50V,ID=2.4A
IDSS
Drain-to-Source Leakage current
——
10 μA VDS=800V,VGS=0V
— — 100
VDS=640V,VGS=0V,TJ=150ْC
Gate-to-Source Forward leakage
— — 100
VGS=30V
IGSS
Gate-to-Source Reverse leakage
nA
— — -100
VGS=-30V
Qg Total Gate Charge
25 33
ID=4.8A
Qgs Gate-to-Source charge
5.6 nC VDS=640V
Qgd
Gate-to-Drain("Miller") charge
12
VGS=10V
td(on)
Turn-on Delay Time
22 55
VDD=400V
tr
td(off)
Rise Time
Turn-Off Delay Time
60 130
ID=4.8A
55 120 nS RG=25
tf Fall Time
40 90
LD Internal Drain Inductance
4.5
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
7.5
and center of
die contact
Ciss Input Capacitance
950 1250
VGS=0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
95 125 pF VDS=25V
11 15
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source Current .
IS
(Body Diode)
Pulsed Source Current
ISM (Body Diode)
.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
4.8
19.2
1.4
610
4.1
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ=25ْC,IS=4.8A,VGS=0V
nS TJ=25ْC,IF=4.8A
nC di/dt=100A/μs
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
Repetitive rating;pulse width limited by
max.junction temperature(see figure 11)
L = 48mH, IAS = 4.8A, VDD = 50V,
RG = 25, Starting TJ = 25°C
ISD4.8A,di/dt200A/μS,VDDV(BR)DSS,
TJ25ْ C
Pulse width300μS; duty cycle2%
2


Part Number SSFP5N80
Description StarMOS Power MOSFET
Maker Good-Ark
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