SSFP9N20 - Power MOSFET

This page provides the datasheet information for the SSFP9N20, a member of the SSFP9N20-Good Power MOSFET family.

Description

StarMOS is a new generation of high voltage N

Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.

Good-Ark

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Datasheet Details

Part number	SSFP9N20
Manufacturer	Good-Ark
File Size	122.44 KB
Description	Power MOSFET
Datasheet	SSFP9N20 Datasheet
Additional preview pages of the SSFP9N20 datasheet.

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Full PDF Text Transcription

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SSFP9N20 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 200V ID25 =9A RDS(ON) =0.

Published: May 7, 2015 |