Good-Ark Semiconductor SSF5510G
The SSF5510G is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability.| Part No. | SSF5510G |
|---|---|
| Datasheet | SSF5510G Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Advanced trench process technology● Ultra low Rdson, typical 8mohm
● High avalanche energy, 100% test
● Fully characterized avalanche voltage and current
● Lead free product ID =56A BV=55V R DS (ON) =8mohm （typ.）
DESCRIPTION
SS5510G is assembled in high reliability and qualified assembly house.APPLICATIONS
● Power switching application SSF5510G Top ViewABSOLUTE MAXIMUM RATINGS
Parameter ID@Tc=25ْ C Continuous drain current,VGS@10V ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ① Power dissipation PD@TC=25ْC Linear derating factor VGS Gate-to-Source voltage dv/dt Peak diode recovery voltage EAS EAR TJ TSTG Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction a
