Good-Ark Semiconductor SSF6N80F
N-Channel MOSFET
FEATURES AND BENEFITS
TO220F● Advanced MOSFET process technology
● Special designed for PWM, load switching and general purpose applications
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● 150℃ operating temperature
● Lead free product SSF6N80F 800V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram
DESCRIPTION
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power