FEATURES AND BENEFITS
PPAK3X3 Advanced MOSFET process technology Ideal for DC-DC converter, power management in portable battery, computer, printer, cellular and general purpose applications Low on-resistance with low gate charge Fast switching and reverse body recovery Schematic Diagram DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25°C) Drain Current – Continuous (TC=100°C) Drain Current – Pulsed1 Power Dissipation (TC=25°C) Power Dissipation – Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS ID IDM PD TSTG TJ Value -30 ±20 -50 -32 -200 59 0.47 -55 to 150 -55 to 150 Unit V V A A A W W/°C °C °C Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Symbol RθJA RθJC Typ. ----- Max. 62 2.1 Unit °C/W °C/W 1/6 SSFN3903 30V P-Channel MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25°...
Good-Ark Semiconductor
