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GPT18N50CD - POWER FIELD EFFECT TRANSISTOR

Download the GPT18N50CD datasheet PDF. This datasheet also covers the GPT18N50C variant, as both devices belong to the same power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offer.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT18N50C-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT18N50CD
Manufacturer Greatpower
File Size 1.46 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT18N50CD Datasheet

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Other Datasheets by Greatpower

Part Number Description
GPT18N50C POWER FIELD EFFECT TRANSISTOR
GPT18N50 POWER FIELD EFFECT TRANSISTOR
GPT18N50D POWER FIELD EFFECT TRANSISTOR
GPT18N60 POWER FIELD EFFECT TRANSISTOR
GPT18N60D POWER FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GPT18N50C / GPT18N50CD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a fast recovery time.