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Guangdong Kexin Industrial

2SC4446 Datasheet Preview

2SC4446 Datasheet

NPN Epitaxial Planar Silicon Transistor

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SMD Type
TransistIoCrs
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NPN Epitaxial Planar Silicon Transistor
2SC4446
Features
Very small-sized package
High VEBO.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
60
50
15
150
300
30
150
150
-55 to +150
Unit
V
V
V
mA
mA
mA
mW
1 Emitter
2 Base
3 Collector
www.kexin.com.cn 1




Guangdong Kexin Industrial

2SC4446 Datasheet Preview

2SC4446 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Output capacitance
Turn-on time
2SC4446
Symbol
Testconditons
ICBO VCB = 40V, IE=0
IEBO VEB = 10V, IC=0
hFE VCE = 6V , IC = 1mA
fT VCE = 6V , IC = 1mA
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
Cob VCB = 6V, f = 1MHz
ton
Storage time
tstg
Fall time
tf
hFE Classification
Marking
Rank
hFE
5
135 270
H
6
200 400
7
300 600
TransistIoCrs
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Min Typ Max Unit
0.1 ìA
0.1 ìA
135 600
130 MHz
0.15 0.5 V
0.85 1.2 V
60 V
50 V
15 V
2.2 pF
50 ns
590 ns
110 ns
2 www.kexin.com.cn


Part Number 2SC4446
Description NPN Epitaxial Planar Silicon Transistor
Maker Guangdong Kexin Industrial
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2SC4446 Datasheet PDF






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