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2SK2925S - N-Channel Silicon MOSFET

Features

  • Low on-resistance RDS =0.060 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching 4V gate drive device can be driven from 5V source +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temp.

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Datasheet Details

Part number 2SK2925S
Manufacturer Guangdong Kexin Industrial
File Size 98.41 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet 2SK2925S Datasheet
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www.DataSheet.co.kr SMD Type N-Channel Silicon MOSFET 2SK2925S IC MOSFET Features Low on-resistance RDS =0.060 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching 4V gate drive device can be driven from 5V source +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.
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