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2SK3483 - MOSFET

Features

  • Super low on-state resistance: RDS(on)1 = 52m RDS(on)2 = 59m MAX. (VGS = 10 V, ID = 14A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 MAX. (VGS = 4.5 V, ID = 14A) Low Ciss: Ciss = 2300 pF TYP. +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperatu.

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Datasheet Details

Part number 2SK3483
Manufacturer Guangdong Kexin Industrial
File Size 64.95 KB
Description MOSFET
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Full PDF Text Transcription

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SMD Type MOS Field Effect Transistor 2SK3483 TO-252 +0.15 1.50-0.15 www.DataSheet4U.com IC MOSFET Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Super low on-state resistance: RDS(on)1 = 52m RDS(on)2 = 59m MAX. (VGS = 10 V, ID = 14A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 MAX. (VGS = 4.5 V, ID = 14A) Low Ciss: Ciss = 2300 pF TYP. +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 100 20 28 60 40 1.
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