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KC846S - NPN Silicon AF Transistors Array

Key Features

  • www. kexin. com. cn 1 www. DataSheet4U. com SMD Type KC846S(BC846S) Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain.
  • Collector-emitter saturation voltage.
  • Base-emitter saturation voltage.
  • Base-emitter voltage.
  • Collector-base capacitance Emitter-base capacitance Noise figure Transition frequency.
  • Pulse test: t < 300 s; D < 2% Symbol VCBO VC.

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Datasheet Details

Part number KC846S
Manufacturer Guangdong Kexin Industrial
File Size 68.35 KB
Description NPN Silicon AF Transistors Array
Datasheet download datasheet KC846S Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com SMD Type NPN Silicon AF Transistors Array KC846S(BC846S) Transistors SOT-363 1.3 +0.1 -0.1 Unit: mm 0.65 0.525 For AF input stage and driver applications High current gain. Low collector-emitter saturation voltage. 0.36 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 0.1max 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM PD Tj Tstg Rating 80 65 6 100 200 250 150 -65 to +150 Unit V V V mA mA mW +0.05 0.95-0.05 +0.1 1.25-0.1 +0.15 2.3-0.15 Features www.kexin.com.cn 1 www.DataSheet4U.